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DPM-E1B SiC MOSFET 1200V/25A

此产品符合AQG324与IEC相关工业标准

产品应用:
高频开关应用
直流/直流变换器
电机驱动系统
不间断电源系






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规格 特性 应用

规格 :

-SixPACK with NTC
-Silicon Carbide MOSFET
-Full Bridge
-Vds=1200V
-Id=25 A
-Ron typical 33 mohm
-Use high performance ZTA substrate
-PressFit contact design
-Tvj=175℃

* Contact us for the datasheet.

•  Electrical features
-  V DSS = 1200 V
-  IDN = 25 A / I DRM = 50 A
-  Low inductive design  
-  Low switching losses


•  Mechanical features
-  Rugged mounting due to integrated mounting clamps
-  Press FIT contact technology
-  Integrated NTC temperature sensor

 

•  High-frequency switching application
•  DC/DC converter
•  Motor drives
•  UPS systems