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Copyright © 2026 DiodSent Green Technology Co., Ltd. All Rights Reserved.
This product has passed AQG-324 reliability qualification.
Product Applications:
Automotive Applications
Hybrid and Electric Vehicles (H)EV
Motor Drive Systems
Commercial and Agricultural Vehicles
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Silicon Carbide MOSFET
three-phase full-bridge with NTC
Vds=1200V
Id=500 A
Ron typical 2.1 mohm
PinFin Base Plate
Use high performance Si3N4 substrate
PressFit contact design
Tvj=175℃
* Contact us for the datasheet.
Automotive SiC MOSFET Power module Features
• Electrical features
- V DSS = 1200 V
- ID nom = 500A
- New semiconductor material - Silicon Carbide
- Low RDSon
- Low Switching Losses
- Low Qg and Crss
- Low Inductive Design <10nH
- Tvj op = 175℃
• Mechanical features
- 4.2 kV DC 1 sec Insulation
- High Creepage and Clearance Distances
- Compact design
- High Power Density
- Direct Cooled PinFin Base Plate
- High Performance Si3N4 Ceramic
- Guiding elements for PCB and cooler assembly
- Integrated NTC temperature sensor
- Press FIT Contact Technology
- RoHS compliant
- UL 94 V0 module frame
Potential applications
• Automotive Applications
• Hybrid Electrical Vehicles (H)EV
• Motor Drives
• Commercial Agriculture Vehicles
DiodSent Green Technology (Wuxi) Co., Ltd.
DiodSent Green Technology Co., Ltd.
Address: No. 45, Zhujiang Rd., Xinwu Dist., Wuxi, Jiangsu Province, China
Tel: +86-510-85202602 ext. 108
Address: No. 2, Ziqiang 5th Rd., Zhongli Dist., Taoyuan City, Taiwan
Tel: +886-3-4893038
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