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DPM-E2B SiC MOSFET 1200V/100A

High-Efficiency Charger Modules
用于车载充电与快速充电系统的高效率碳化硅模块,支持高功率转换与宽电压范围应用










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规格 特性 应用

规格
- Four PACK with NTC
- Silicon Carbide MOSFET
- Vds=1200V
- Id=100 A
- Ron typical 8 mohm
- Use high performance Al2O3  substrate
- PressFit contact design
- Tvj=175℃
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

* Contact us for the datasheet.

 

 

• Electrical features 
- VDSS = 1200 V 
- IDN = 100 A / IDRM = 200 A 
- Low inductive design 
- Low switching losses 
- High current density


• Mechanical features
- PressFIT contact technology 
- Integrated NTC temperature sensor 
- Rugged mounting due to integrated mounting clamps 
- Pre-applied thermal interface material

Potential applications

• High-frequency switching application

• DC/DC converter

• UPS systems

• DC charger for EV